Authors: Carta, Daniela, Salaoru, Iulia, Khiat, Ali, Regoutz, Anna, Mitterbauer, Christoph, Harrison, Nicholas M., Prodromakis, Themistoklis
Subject Terms: resistive memory, titanium dioxide, memristors, energy dispersive X-ray spectroscopy, thin films, resistive switching
File Description: application/octet-stream
Relation: Carta, D. et al. (2016) Investigation of the Switching Mechanism in TiO2‑Based RRAM: A Two-dimensional EDX approach. Applied Materials and Interfaces, 8 (30), pp. 19605-19611; http://hdl.handle.net/2086/12481; https://doi.org/10.1021/acsami.6b04919