Authors: Lei, Wen, Ren, Yongling, Wang, Y L, Li, Qing
Superior Title: Journal of Crystal Growth
Subject Terms: Keywords: A1. Alloy phase separation, A1. Nanostructures, A3. Molecular beam epitaxy, B2. InAs/InAlAs, B2: Semiconducting III-V materials, Alloys, Crystal growth, Indium arsenide, Molecular beam epitaxy, Molecular beams, Nanostructures, Phase modulation, Semiconduc A1. Alloy phase separation
Relation: http://hdl.handle.net/1885/55325
Authors: Nakkar, A., Folliot, H., Le Corre, A., Doré, F., Alghoraibi, I., Labbé, C., Elias, G., Loualiche, S., Pistol, M.-E., Caroff, P., Ellström, C.
Superior Title: Applied Physics Letters
Subject Terms: Keywords: Arsenic, Crystal growth, Epitaxial growth, Gas source molecular beam epitaxy, Leakage (fluid), Light emission, Luminescence, Molecular beam epitaxy, Molecular beams, Molecular dynamics, Optical properties, Optical waveguides, Quantum electronics, Semicond
Relation: http://hdl.handle.net/1885/15552
Authors: Nakkar, A., Folliot, H., Le Corre, A., Doré, F., Alghoraibi, I., Labbé, C., Elias, G., Loualiche, S., Pistol, M.-E., Caroff, P., Ellström, C.
Superior Title: Applied Physics Letters
Subject Terms: Keywords: Arsenic, Crystal growth, Epitaxial growth, Gas source molecular beam epitaxy, Leakage (fluid), Light emission, Luminescence, Molecular beam epitaxy, Molecular beams, Molecular dynamics, Optical properties, Optical waveguides, Quantum electronics, Semicond
Relation: http://hdl.handle.net/1885/15552
Availability: http://hdl.handle.net/1885/15552
Authors: Hoskens, R C P, van de Roer, T G, Smalbrugge, E, Kwaspen, J J M, Tolstikhin, V I, Tan, Hoe Hark, Jagadish, Chennupati, Acket, G A
Contributors: Aleksandar D. Rakic, Yew Tong Yeow
Superior Title: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
Subject Terms: Keywords: Civil aviation, Current density, Electron injection, Electrons, Epitaxial growth, Heating, Hot carriers, Hot electrons, Injection lasers, Lasers, Leakage currents, Molecular beam epitaxy, Pulsed laser deposition, Semiconductor lasers, Thermal noise, activ Carrier heating, Chirp, Direct modulation, Heterojunction bipolar transistor, Laser diode, Ultrafast modulation
Subject Geographic: Brisbane Australia
Relation: Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004); http://hdl.handle.net/1885/82653
Superior Title: Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology
Subject Terms: Keywords: Crystal growth, Epitaxial growth, Indium arsenide, Molecular beam epitaxy, Nanoscience, Nanotechnology, Optical waveguides, Quantum electronics, Semiconducting indium, Silicon compounds, International conferences, Nanoscience and nanotechnology (NST), Pre Integrated optoelectronic devices, Quantum dots, Selective area epitaxy
Subject Geographic: Brisbane Australia
Relation: International Conference on Nanoscience and Nanotechnology (ICONN 2006); http://hdl.handle.net/1885/26520; https://openresearch-repository.anu.edu.au/bitstream/1885/26520/7/01_Mokkapati_Integration_of_Quantum_Dot_2006.pdf.jpg
Authors: Lever McGowan, Penelope, Lowrie-Nunes, Zo, Buda, Manuela, Tan, Hoe Hark, Jagadish, Chennupati
Contributors: Aleksandar D. Rakic, Yew Tong Yeow
Superior Title: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
Subject Terms: Keywords: Crystal growth, Epitaxial growth, Lasers, Metals, Molecular beam epitaxy, Optical waveguides, Quantum electronics, Threshold current density, (140.3500) lasers, characterisation, Gain saturation, InGaAs/GaAs, Metal organic (MO), Microelectronic materials, InGaAs, Quantum dots, Semiconductor lasers
Subject Geographic: Brisbane Australia
Relation: Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004); http://hdl.handle.net/1885/53148
Authors: Hoskens, R C P, van de Roer, T G, Smalbrugge, E, Kwaspen, J J M, Tolstikhin, V I, Tan, Hoe Hark, Jagadish, Chennupati, Acket, G A
Contributors: Aleksandar D. Rakic, Yew Tong Yeow
Superior Title: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
Subject Terms: Keywords: Civil aviation, Current density, Electron injection, Electrons, Epitaxial growth, Heating, Hot carriers, Hot electrons, Injection lasers, Lasers, Leakage currents, Molecular beam epitaxy, Pulsed laser deposition, Semiconductor lasers, Thermal noise, activ Carrier heating, Chirp, Direct modulation, Heterojunction bipolar transistor, Laser diode, Ultrafast modulation
Subject Geographic: Brisbane Australia
Relation: Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004); http://hdl.handle.net/1885/82653
Availability: http://hdl.handle.net/1885/82653
Authors: Lever McGowan, Penelope, Lowrie-Nunes, Zo, Buda, Manuela, Tan, Hoe Hark, Jagadish, Chennupati
Contributors: Aleksandar D. Rakic, Yew Tong Yeow
Superior Title: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
Subject Terms: Keywords: Crystal growth, Epitaxial growth, Lasers, Metals, Molecular beam epitaxy, Optical waveguides, Quantum electronics, Threshold current density, (140.3500) lasers, characterisation, Gain saturation, InGaAs/GaAs, Metal organic (MO), Microelectronic materials, InGaAs, Quantum dots, Semiconductor lasers
Subject Geographic: Brisbane Australia
Relation: Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004); http://hdl.handle.net/1885/53148
Availability: http://hdl.handle.net/1885/53148
Authors: Caroff, Philippe, Wagner, Jakob B, Dick, Kimberley A., Nilsson, H, Jeppsson, Mattias, Deppert, Knut, Samuelson, Lars, Wallenberg, L Reine, Wernersson, Lars-Erik
Superior Title: Small
Subject Terms: Keywords: Arsenic, Communication channels (information theory), Concentration (process), Crystal growth, Electric wire, Epitaxial growth, Heterojunctions, Indium, Indium arsenide, Lead, Metallorganic vapor phase epitaxy, Metals, Molecular beam epitaxy, Nanostructur Heterostructures, Indium antimonide, MOCVD, Nanowires, TEM
Relation: http://hdl.handle.net/1885/82194
Authors: Conesa-Boj, Sonia, Russo-Averchi, E., Dalmau-Malloriqui, A, Trevino, Jacob, Pecora, Emanuele F, Forestiere, Carlo, Handin, Alex, Ek, Martin, Zweifel, Ludovit, Wallenberg, L Reine, Ruffer, D, Heiss, M., Troadec, David, Dal Negro, Luca, Caroff, Philippe, Fontcuberta i Morral, Anna
Superior Title: ACS Nano
Subject Terms: Keywords: Epitaxially grown, III-V compound semiconductor, InAs, Nano-scale aperture, Nanomembranes, New forms, Precise position, Regular array, Si(0 0 1), V-shape, Epitaxial growth, Indium arsenide, Light scattering, Molecular beam epitaxy, Nucleation, Silicon, Na III-V nanostructures
Relation: http://hdl.handle.net/1885/81580
Authors: Shan, Wei, Yu, Kin Man, Walukiewicz, W, Ager, J W, Haller, E E, Ridgway, Mark C
Superior Title: Applied Physics Letters
Subject Terms: Keywords: Annealing, Ion implantation, Light modulation, Metallorganic chemical vapor deposition, Molecular beam epitaxy, Nitrogen, Semiconducting aluminum compounds, Semiconducting gallium compounds, Semiconductor growth, Spectroscopic analysis, Synthesis (chemica
Relation: http://hdl.handle.net/1885/93405
Availability: http://hdl.handle.net/1885/93405
Authors: Caroff, Philippe, Bertru, N, Lu, W, Elias, G, Dehaese, O, Letoublon, A, Le Corre, A
Superior Title: Journal of Crystal Growth
Subject Terms: Keywords: A1. Reflection high-energy electron diffraction, A3. Molecular beam epitaxy, A3. Quantum dots, Capping layers, Critical thickness, Double-cap procedures, InAs, InAs quantum dots, Inp, InP substrates, Mass transports, Substrate temperatures, Crystal growth A1. Reflection high-energy electron diffraction
Relation: http://hdl.handle.net/1885/79888
Authors: Bogaart, E W, Haverkort, J E M, Mano, T, Notzel, Richard, Wolter, Joachim, Lever McGowan, Penelope, Tan, Hoe Hark, Jagadish, Chennupati
Superior Title: IEEE Transactions on Nanotechnology
Subject Terms: Keywords: Absorption, Atomic force microscopy, Electron traps, Molecular beam epitaxy, Optical switches, Photoluminescence, Pumping (laser), Semiconductor lasers, Spectrum analysis, Bleaching (quantum dots), Bleaching decay time, Time resolved, Time resolved pump-p Bleaching, Dynamics, Quantum dots (QDs), Spectroscopy
Relation: http://hdl.handle.net/1885/78271
Authors: Biermanns, A., Carbone, Dina, Breuer, Steffan, Jacques, Vincent L.R., Schulli, Tobias, Geelhaar, L., Pietsch, U.
Superior Title: Physica Status Solidi: Rapid Research Letters
Subject Terms: Keywords: Fast scanning, GaAs, Gaas nanowires, Si (1 1 1), Statistical distribution, Wurtzite structure, X-ray nanodiffraction, Zinc-blende, Crystal structure, Gallium arsenide, Molecular beam epitaxy, Nanowires, Semiconducting gallium, X ray diffraction, Zinc sulf Crystal structure, X-ray diffraction
Relation: http://hdl.handle.net/1885/77816
Authors: Li, Na, Fu, Lan, Li, Ning, Chan, Yan-Cheong, Lu, Wei, Shen, S C, Tan, Hoe Hark, Jagadish, Chennupati
Superior Title: Journal of Crystal Growth
Subject Terms: Keywords: Current voltage characteristics, Infrared detectors, Ion implantation, Metallorganic chemical vapor deposition, Molecular beam epitaxy, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Semiconductor growth, Aluminum gallium arsenide, Qu
Relation: http://hdl.handle.net/1885/68455
Availability:
https://doi.org/10.1016/S0022-0248(00)01003-4
http://hdl.handle.net/1885/68455
Authors: Parkinson, Patrick, Dodson, Christopher, Joyce, Hannah J, Bertness, Kris A., Sanford, Norman A., Herz, Laura, Johnston, Michael B
Superior Title: Nano Letters
Subject Terms: Keywords: Bulk materials, Catalyst-free, Crystalline structure, Gallium nitride nanowires, GaN, GaN nanowires, High mobility, Non-contact, Noncontact measurements, Surface plasmons, Surface trap, Tera Hertz, Gallium nitride, Molecular beam epitaxy, Photoconductivit GaN, nanowire, photoconductivity, surface plasmon, terahertz
Relation: http://hdl.handle.net/1885/66757
Authors: Coleman, Victoria A, Buda, Manuela, Tan, Hoe Hark, Jagadish, Chennupati, Phillips, Matthew R, Koike, Kazuto, Sasa, Shigehiko, Inoue, Masataka, Yano, Mitsuaki
Superior Title: Semiconductor Science and Technology
Subject Terms: Keywords: Cathodoluminescence, Crystal defects, Diffusion, Ion implantation, Molecular beam epitaxy, Optoelectronic devices, Rapid thermal annealing, Semiconducting zinc compounds, Band gaps, Barrier layers, Interdiffusion, Semiconductor quantum wells
Relation: http://hdl.handle.net/1885/85053
Authors: Caroff, Philippe, Bolinsson, Jessica, Johansson, Jonas
Superior Title: IEEE Journal on Selected Topics in Quantum Electronics
Subject Terms: Keywords: III-V nanowires (NWs), metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), nucleation kinetics modeling, Polytypism, thermodynamic modeling, Twin planes, Vapor-liquid-solid growth, Wurtzites, zinc blende (ZB), Epitaxial growth, Molecul Gold-assisted vapor-liquid-solid (VLS) growth, III-V nanowires (NWs), stacking faults (SFs), twin plane (TP), wurtzit
Relation: http://hdl.handle.net/1885/84887
Superior Title: Nanotechnology
Subject Terms: Keywords: Diamonds, Epitaxial films, Film thickness, Germanium, Magnetic films, Molecular beam epitaxy, Nanoindentation, Semiconducting silicon compounds, Stresses, Thin films, Diamond tips, Elastic stresses, Fracture responses, Ge films, Indenter, Induced dislocat
Relation: http://hdl.handle.net/1885/35833
Authors: Berky, W, Gottschalk , S, Elliman, Robert, Balogh, A G
Superior Title: Nuclear Instruments and Methods in Physics Research: Section B
Subject Terms: Keywords: Atomic force microscopy, Interfaces (materials), Molecular beam epitaxy, Rutherford backscattering spectroscopy, Tantalum, Thin films, Ballistic mixing, Ion beam mixing, Radiation enhanced diffusion, Thermal spike effects, Ion beams Ion beam mixing, Rutherford backscatering spectroscopy
Relation: http://hdl.handle.net/1885/24036