Contributors: Bursa Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Bayramoğlu, Hüsnü, Peksöz, Ahmet, AAG-9772-2021, 57204095479, 23100976500
Subject Terms: Engineering, Materials science, Physics, Electrodeposition, Cadmium selenide, N-type semiconductor, Mott-Schottky, Electrochemical impedance spectroscopy, Molecular-beam epitaxy, Electrical-properties, Optical-properties, Photoelectrochemical properties, Vapor-deposition, Spray-pyrolysis, Growth, Nanostructures, Annealing, Cadmium chloride, Carrier concentration, Chlorine compounds, Crystal structure, Electrochemical deposition, Electrodes, Electrolytes, Energy gap, II-VI semiconductors, Indium compounds, Ito glass, Lithium compounds, Reduction
Relation: Makale - Uluslararası Hakemli Dergi; HDP(F)-2017/23; Materials Science in Semiconductor Processing; Bayramoğlu, H. ve Peksoz, A. (2019). ''Electronic energy levels and electrochemical properties of co-electrodeposited CdSe thin films''. Materials Science in Semiconductor Processing, 90, 13-19.; https://doi.org/10.1016/j.mssp.2018.09.021; https://www.sciencedirect.com/science/article/pii/S1369800118309168; http://hdl.handle.net/11452/30738; 000450320600003; 2-s2.0-85054422975; 13; 19; 90
Contributors: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Afrailov, Muhitdin Ahmetoğlu, 55153359100
Subject Terms: Materials science, Physics, Dark currents, Type II heterojunctions, Band alignment, Liquid phase epitaxy, Photovoltaic characteristics, III-V semiconductors, Spectral range, Heterojunctions, Light, Open circuit voltage, Photovoltaic effects, Band alignments, Heterojunction photodiodes, Incident light, Photovoltaic modes, Room temperature, Type II, Type II heterojunction, Current voltage characteristics, multidisciplinary, coatings & films, applied, condensed matter, Semiconductor Quantum Wells, Heterostructures, Photodiodes
Relation: Makale - Uluslararası Hakemli Dergi; 2007/36; Thin Solid Films; Afrailov, M. A. (2012). "Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m". Thin Solid Films, 520(15), 5014-5017.; https://doi.org/10.1016/j.tsf.2012.03.014; https://www.sciencedirect.com/science/article/pii/S0040609012002738; http://hdl.handle.net/11452/25805; 000304568300034; 2-s2.0-84860264687; 5014; 5017; 520; 14
Contributors: Uludağ Üniversitesi/Fen Edebiyat Fakültesi/Fizik Bölümü., Uludağ Üniversitesi/Teknik Bilimler Meslek Yüksekokulu/Mekatronik Programı Bölümü., Ahmetoğlu, Muhitdin, Kucur, Banu, Gücüyener, İsmet, 16021109400, 36903670200, 15834767100
Subject Terms: Materials science, Optics, Light emitting diode, Avalanche breakdown, I-V characteristics, Aluminum gallium arsenide, Diodes, Gallium arsenide, III-V semiconductors, Infrared devices, Light emitting diodes, Semiconducting gallium, Infrared light emitting diodes, IV characteristics, Near infrared light, Avalanche diodes, multidisciplinary, Liquid Phase Epitaxy, Photoconductive Cells, Inp
Relation: Makale - Uluslararası Hakemli Dergi; 2007/36; Optoelectronics and Advanced Materials-Rapid Communications; Ahmetoğlu, M. vd. (2012). "Electrical properties of GaAs-GaAlAs near infrared light emitting diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(9-10), 782-784.; https://oam-rc.inoe.ro/volume/2012/6/9-10/September-October%202012/articles; http://hdl.handle.net/11452/25550; 000310498100002; 2-s2.0-84872239338; 782; 784; 9-10
Availability:
http://hdl.handle.net/11452/25550
https://oam-rc.inoe.ro/volume/2012/6/9-10/September-October%202012/articles
Authors: Andreev, Igor A., Kunitsyna, Ekaterina V., Moiseev, Konstantin D., Mikhailova, Maya P., Yakovlev, Yu P.
Contributors: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Ahmetoğlu, Muhitdin, 16021109400
Subject Terms: Instruments & instrumentation, Optics, Physics, III-V semiconductors, Dark currents, Spectral sensetivity, Photodiode structures, Liquid phase epitaxy (LPE), Photodetector, Growth, Inas, Optical materials, Photodiodes, Current flows, Current mechanisms, Diffusion mechanisms, Heterojunction photodiodes, High temperature, Liquid Phase, Low temperature regions, Optical characteristics, Reverse bias, Reverse currents, Spectral range, Tunneling mechanism, Heterojunctions, applied, Semiconductor Quantum Wells, Heterostructures
Relation: 108T325; Makale - Uluslararası Hakemli Dergi; Infrared Physics & Technology; Sanayi; Ahmetoğlu, M. vd. (2012). "Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m". Infrared Physics & Technology, 55(1), 15-18.; https://doi.org/10.1016/j.infrared.2011.07.006; https://www.sciencedirect.com/science/article/pii/S1350449511000831; https://www.infona.pl/resource/bwmeta1.element.elsevier-8d5ec347-ea4b-36d9-83fe-9fcdf031173d; http://hdl.handle.net/11452/24182; 000300966200003; 2-s2.0-84655161427; 15; 18; 55
Contributors: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Afrailov, Muhitdin Ahmetoğlu, 55153359100
Subject Terms: Dark currents, Photodiode structures, Avalanche multiplication, Liquid-phase epitaxy (LPE), Growth, Instruments & instrumentation, Optics, Physics, Crystal growth, Heterojunction bipolar transistors, Heterojunctions, Liquids, C-V measurement, Difference frequency, Electrical characteristic, InAsSbP, Mid-infrared regions, Power-voltage, Recombination centers, Room temperature, Space charge regions, Spectral range, Temperature dependence, Temperature range, Uncooled, Wavelength ranges, Photodiodes, applied, Semiconductor Quantum Wells, Heterostructures
Relation: Makale - Uluslararası Hakemli Dergi; Infrared Physics and Technology; Afrailov, M. A. (2010). "Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μm". Infrared Physics and Technology, 53(1), 29-32.; https://doi.org/10.1016/j.infrared.2009.08.005; https://www.sciencedirect.com/science/article/pii/S1350449509001054; http://hdl.handle.net/11452/25371; 000274599800005; 2-s2.0-71349083242; 29; 32; 53
Authors: Kadirov, O.
Contributors: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Ahmetoğlu, Muhitdin, Özer, Mehmet, 16021109400, 9742545600
Subject Terms: Heterostructures, Photoelectrical properties, The tunneling current, Photo-diodes, Photodetector, Materials science, Optics, Electric fields, Electron tunneling, Heterojunctions, III-V semiconductors, Indium phosphide, Semiconducting indium phosphide, Avalanche multiplication factor, Direct energy gaps, Effective mass, Photo-electrical properties, Reverse voltages, Temperature coefficient, Temperature range, Tunneling current, Temperature, multidisciplinary, Liquid Phase Epitaxy, Photoconductive Cells, Light Emitting Diodes
Relation: Makale - Uluslararası Hakemli Dergi; Optoelectronics and Advanced Materials, Rapid Communications; Yurt dışı; Ahmetoğlu, M. vd. (2009). "Photoelectrical properties of InP-InGaAsp heterojunction avalanche photodiodes". Optoelectronics and Advanced Materials, Rapid Communications, 3(6), 608-611.; http://hdl.handle.net/11452/24900; 000268723400019; 2-s2.0-77951983589; 608; 611
Availability: http://hdl.handle.net/11452/24900
Contributors: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Ahmetoğlu, Muhitdin, 23093032800
Subject Terms: Materials science, Physics, Band alignment, Dark current, III-V quaternary compounds, Isotype structures, Liquid phase epitaxy, Type II heterojunctions, Gallium compounds, Temperature distribution, Electrical transports, Isotype heterostructures, Tunneling mechanisms, Heterojunctions, Room-temperature, Spectral range, Mu-m, Photoiodes, Barriers, multidisciplinary, coatings & films, applied, condensed matter, Semiconductor Quantum Wells, Heterostructures, Photodiodes
Relation: Makale - Uluslararası Hakemli Dergi; Thin Solid Films; Ahmetoğlu, M. (2008). "Electrical transport at a isotype type II heterojunctions in the system of GaSb-GaInAsSb". Thin Solid Films, 516(6), 1227-1231.; https://doi.org/10.1016/j.tsf.2007.06.003; https://www.sciencedirect.com/science/article/pii/S0040609007008668; https://hdl.handle.net/11452/40883; 000252980400057; 2-s2.0-37349095728; 1227; 1231; 516
Authors: Stutzmann, M.
Contributors: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., orcid:0000-0002-0781-3376, Ertürk, Kadir, Bektöre, Yüksel, Hacıismailoğlu, Muhammed Cüneyt, K-7950-2012, 18036952100, 8975743400, 8975743500
Subject Terms: Engineering, Materials science, Optics, Physics, Strain relaxation, SI/SIGE, Layers, Capacitance, Current voltage characteristics, Electric properties, Molecular beam epitaxy, Thermal effects, Capacitance-voltage (C-V) measurements, Schottky barrier heights, Schottky contact properties, Silicon molecular beam epitaxy (Si-MBE), Silicon compounds, electrical & electronic, multidisciplinary, condensed matter, Sige, Dislocations (Crystals), Heterostructures
Relation: Konferans Öğesi - Uluslararası; 2003/100; Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4 (Physica Status Solidi C-Current Topics in Solid State Physics); Yurtdışı; Ertürk, K. vd. (2005). "Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure". ed. M. Stutzmann. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4(Physica Status Solidi C-Current Topics in Solid State Physics), 2(4), 1428-1432.; https://doi.org/10.1002/pssc.200460480; http://hdl.handle.net/11452/22708; 000228480500035; 2-s2.0-27344453164; 1428; 1432
Authors: Mikhailova, M. P., Stoyanov, Nkolay, Andreychuk, O. V., Moiseev, K. D., Andreev, Igor, Yakovlev, Yu P.
Contributors: Uludağ Üniversitesi., Afrailov, M. Ahmetoğlu, 55153359100
Subject Terms: Emission, Engineering, Optics, Telecommunications, Energy gap, Thermodynamic equilibrium, Photodiodes, Band bending, Band energy diagram, Barrier heights, Capacitance voltage characteristics, Carrier separation, Hole concentration, Long wavelength photodiodes, Photoelectrical parameters, Spectral response, Semiconductor growth, Heterojunctions, Interfaces (materials), Lattice constants, Liquid phase epitaxy, Ohmic contacts, Semiconducting antimony compounds, Semiconducting indium compounds, Semiconductor device manufacture, Solid solutions, Substrates, electrical & electronic, Semiconductor Quantum Wells, Heterostructures
Relation: Makale - Uluslararası Hakemli Dergi; IEEE Proceedings-Optoelectronics; Yurt dışı; Mikhailova, M. P. (2002). "Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature". IEEE Proceedings Optoelectronics, 149(1), 41-44.; https://doi.org/10.1049/ip-opt:20020348; https://digital-library.theiet.org/content/journals/10.1049/ip-opt_20020348; http://hdl.handle.net/11452/28713; 000175120700009; 2-s2.0-0036476782; 41; 44; 149